A summary of the 209 PCB congener nomenclatureMILLS, Snell A; THAI, David I; BARNEY, Jonathan et al.Chemosphere (Oxford). 2007, Vol 68, Num 9, pp 1603-1612, issn 0045-6535, 10 p.Article

The impact of intra-operative transoesophageal echocardiography on cardiac surgical practiceKLEIN, A. A; SNELL, A; NASHEF, S. A. M et al.Anaesthesia. 2009, Vol 64, Num 9, pp 947-952, issn 0003-2409, 6 p.Article

Effects of lipopolysaccharide and cyclosporin on the endocrine control of ovarian functionSHAKIL, T; SNELL, A; WHITEHEAD, S. A et al.Journal of reproduction and fertility. 1994, Vol 100, Num 1, pp 57-64, issn 0022-4251Article

The Old Shop, Somerwood (SJ 553155)MORAN, M; SNELL, A.Transactions of the Shropshire. Archaeological Society. 1983, Vol 64, pp 69-75Article

Temporal aggregation and the power of tests for a unit rootPIERSE, R. G; SNELL, A. J.Journal of econometrics. 1995, Vol 65, Num 2, pp 333-345, issn 0304-4076Article

Current-induced instability in Cr-p⁺ a-Si:H-V thin film devicesHU, J; SNELL, A. J; HAJTO, J et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 1, pp 29-43, issn 1364-2812Article

Field-induced anomalous changes in Cr/a-Si:H/V thin film structuresHU, J; SNELL, A. J; HAJTO, J et al.Thin solid films. 2001, Vol 396, Num 1-2, pp 240-249, issn 0040-6090Article

Analogue memory and ballistic electron effects in metal-amorphous silicon structuresHAJTO, J; OWEN, A. E; SNELL, A. J et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 349-369, issn 0958-6644Article

Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structuresHAJTO, J; MCAULEY, B; SNELL, A. J et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 579-584, issn 0169-4332Conference Paper

Quantized electron transports in amorphous-silicon memory structuresHAJTO, J; OWEN, A. E; GAGE, S. M et al.Physical review letters. 1991, Vol 66, Num 14, pp 1918-1921, issn 0031-9007Article

Metal-semiconductor transition in electroformed chromium/amorphous silicon/vanadium thin-film structuresHAJTO, J; SNELL, A. J; HU, J et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 69, Num 2, pp 237-251, issn 0958-6644Article

Modelling crop growth and yield under the environmental changes induced by windbreaks. 2. Simulation of potential benefits at selected sites in AustraliaCARBERRY, P. S; MEINKE, H; POULTON, P. L et al.Australian journal of experimental agriculture. 2002, Vol 42, Num 6, pp 887-900, issn 0816-1089, 14 p.Article

A new amorphous silicon reflective sensor optimized for bar-code readingSNELL, A. J; LECOMBER, P. G; BARNETT, C. F et al.Sensors and actuators. A, Physical. 1993, Vol 36, Num 3, pp 173-176, issn 0924-4247Article

Device applications of vanadium-doped silicon-dioxideDELIMA, J. J; SNELL, A. J; KRISHNA, K. V et al.Journal of applied physics. 1989, Vol 65, Num 10, pp 4082-4084, issn 0021-8979, 3 p.Article

Transient current instabilities in a-Si: H p⁺ ni structuresCHOI, W. K; REYNOLDS, S; HAJTO, J et al.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 1, pp 1-6, issn 0143-7100, 1Article

Constant current forming in Cr/p⁺a-Si:H/V thin film devicesHU, J; SNELL, A. J; HAJTO, J et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1187-1191, issn 0022-3093, bConference Paper

Theory of room temperature quantized resistance effects in metal-a-Si:H-metal thin film structuresHAJTO, J; MCAULEY, B; SNELL, A. J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 825-828, issn 0022-3093, 2Conference Paper

Critical behavior of the dielectric properties near the metal-non-metal transition in Cr/p⁺ a-Si:H/V thin film devicesHU, J; SNELL, A. J; HAJTO, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1217-1220, issn 0022-3093, 2Conference Paper